

AL |
A Photo Lithographic single layer inductor, Stable inductance in high frequency circuit. Tight tolerance of ±1%,±2% or ±0.1nH, Miniature size of 0201/0402/0603, High SRF, Excellent Q |
WL |
Miniature wire wound chip inductor for fully automated assembly. Wire-wound ceramic construction providing high self resonant frequency and superior high Q, stable solderability. Complete size for 0402/0603/0805/1008/1206, Tight tolerance of ±2%,5%,10% |
CL |
SMD Multi- layered chip inductor provided cost efficient in large production, High Q, High SRF, Wide inductance range, Tight tolerance of ±5%,±10% or ±0.3nH, Miniature size of 0201/0402/0603/0805 |
NL |
Ferrite Wirewound Chip inductor, size of 0805/1008/1210/1812/2220 , Both pen and molded types are available, Large current support. These revolutionary, highly reliable wound chip inductors for automatic mounting, have been developed in response to the trend toward high density in electronic equipment. With metal terminals and a body of heat resistant resin, these inductors offer strong solderability , Highly accurate dimensions, can be mounted automatically, Super Q Characteristics. |
Power Inductor |
Complete sizes and different material for different application need. High current, Low RDC, |
CM |
Small Chip Inductor with Ferrite Core and Two Line Types Wire wound. |
CB |
SMD Multi-layered Chip bead provide a cost effective solution for wide applications in EMI Countermeasure. General use, high power is available. |

AR |
Thin Film Passivated NiCr Resistor with Very tight tolerance ±0.01%, 0.05%,0.1%,0.25%,0.5%, 1%, Extremely low TCR 5,10,15,25,50ppm/℃, Wide R-Value range for 1ohm~3Mohm, Complete size of 0201/0402/0603/0805/1206/2010/ 2512, |
PR |
Special Passivated NiCr Film for Anti-Acid and Anti-Damp. Stable performance at moisture receptivity, Guarantee long term life stability and demonstrated the Anti-Corrosion claims Characterized by Tantalum. |
CSR |
SMD type, Advanced thin film technology. Excellent overall stability: Class 0.25. Force fitted steel caps, tin plated on nickel barrier. Pure Sn termination on Ni barrier layer. Provided 0204,0207 , tight tolerance of 0.1%,0 .5%,1%, TC10,15,25,50 ppm/℃ |
MFR |
Leaded type, Advanced thin film technology. Excellent overall stability. |
CS |
Thick Film process for low TCR 100ppm/℃, 3W in 1225 package size, Very low ohm from 1mohm-1000mohm, High purity alumina substrate for high power dissipation, Complete size of 0201/0402/0603/0805/1206/2010/2512/3720/7520/1225 |
TCS |
Thin Film process for very tight tolerance of ±0.5%,1%,5% , low TCR 50,100ppm/℃, 3W in 2512 package size, Very low ohm from 1mohm-1000mohm, High purity alumina substrate for high power dissipation, High reliability, stability. |
LR |
High Wattage rating up to 3W, Low TC 50,100ppm/℃, Ultra low ohm from 0.5m to 22mohm, |
TR |
TO-220 package 20W/30W/35W/50W at 25/℃ Case temperature heat sink mounted, Molded case for protection and easy to mount, non inductive. |
PHV |
Thin Film process with tight tolerance of 0.1%, High Voltage upto 1500V, low TCR 15/25ppm/℃, Wide resistance range: 10K~40Mohm |
WB |
Miniature size of 0201,0402 and availability of customized spec. Tolerance of .1%~10%, Low TCR25ppm/℃, Resistance range is 1ohm~100Kohm. Single bonding pad and Double bonding pads are available. |

Thin Film Chip Capacitor
Thin film process in Silicon capacitor offers high precision and stable, High Q , Low TCC, Available on MIM or MIS structures, The MIS capacitors provide top and bottom contact, and MIM capacitors have both terminals on top of silicon substrate. Customized spec is upon request.
Application: Miniaturization module and Hybrid Circuits, Smart card, RFID.




